Improved split CV method for effective mobility extraction in sub-0.1-μm Si MOSFETs
K Romanjek, F Andrieu, T Ernst… - IEEE Electron Device …, 2004 - ieeexplore.ieee.org
K Romanjek, F Andrieu, T Ernst, G Ghibaudo
IEEE Electron Device Letters, 2004•ieeexplore.ieee.orgThe feasibility of split capacitance-voltage (CV) measurements in sub-0.1 μm Si MOSFETs is
demonstrated. Based on the split CV measurements, an improved methodology to extract
accurately the effective channel length and the effective mobility is proposed. Unlike
conventional I/sub d/(V/sub g/)-based extraction techniques, this new approach does not
assume the invariance of the effective mobility with gate length (assumption proved to be
false in this paper). This method is relevant to study transport limitations in ultimate …
demonstrated. Based on the split CV measurements, an improved methodology to extract
accurately the effective channel length and the effective mobility is proposed. Unlike
conventional I/sub d/(V/sub g/)-based extraction techniques, this new approach does not
assume the invariance of the effective mobility with gate length (assumption proved to be
false in this paper). This method is relevant to study transport limitations in ultimate …
The feasibility of split capacitance-voltage (C-V) measurements in sub-0.1 μm Si MOSFETs is demonstrated. Based on the split C-V measurements, an improved methodology to extract accurately the effective channel length and the effective mobility is proposed. Unlike conventional I/sub d/(V/sub g/)-based extraction techniques, this new approach does not assume the invariance of the effective mobility with gate length (assumption proved to be false in this paper). This method is relevant to study transport limitations in ultimate MOSFETs as illustrated with the study of pocket implant influence on 50-nm p-MOSFETs.
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