The terahertz radiation in GaAs/AlGaAs quantum wells with different types of doping was
experimentally studied under interband optical excitation of nonequilibrium charge carriers.
The structures doped only with donors, and the structures with a high degree of
compensation of donors by acceptors were studied. The spectra of terahertz radiation
associated with charge carrier transitions with the participation of shallow impurity states
were obtained and analyzed. It was shown that the compensation of donors by acceptors …