optical and electronic devices. These applications, such as pseudo-vertical Schottky diodes
or Bragg mirrors, rely on the synthesis of boron-doped (p+) and non-intentionally doped
(nid) stacked epilayer with well-controlled thicknesses, doping level and sharp interfaces.
Such structures require a time-consuming optimization of the growth processes throughout
the use of destructive techniques such as Secondary Ion Mass Spectroscopy (SIMS) …