In situ studies of low temperature atomic level processing of GaN surfaces for atomic layer epitaxial growth
SG Rosenberg, C Wagenbach, VR Anderson… - Journal of Vacuum …, 2019 - pubs.aip.org
In situ synchrotron x-ray studies were employed to develop a fundamental understanding of
the low temperature atomic level processes (ALPs) for GaN substrates to develop in situ
methods for preparation of epitaxy ready surfaces. An emulated gallium flash-off (GFO) ALP,
followed by a hydrogen clean ALP, and a subsequent nitridation ALP are studied as a
function of temperature and number of cycles. The results demonstrate that ideal GFO ALP
results are achieved at a higher temperature, 500 C, and that only ten GFO ALP cycles are …
the low temperature atomic level processes (ALPs) for GaN substrates to develop in situ
methods for preparation of epitaxy ready surfaces. An emulated gallium flash-off (GFO) ALP,
followed by a hydrogen clean ALP, and a subsequent nitridation ALP are studied as a
function of temperature and number of cycles. The results demonstrate that ideal GFO ALP
results are achieved at a higher temperature, 500 C, and that only ten GFO ALP cycles are …
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