In-plane dispersion of the quantum-well states of the epitaxial silver films on silicon

I Matsuda, T Ohta, HW Yeom - Physical Review B, 2002 - APS
I Matsuda, T Ohta, HW Yeom
Physical Review B, 2002APS
In-plane dispersion of the quantum-well states (QWS's) associated with the electron
confinement in metastable epitaxial Ag films grown on the Si (111) 7× 7 and Si (001) 2× 1
surfaces is investigated by angle-resolved photoemission using synchrotron radiation. In
contrast to the free-electron-like behavior expected, these QWS's show intriguing
dispersions such as (i) a significant enhancement of the in-plane effective mass with
decreasing binding energy and (ii) a splitting of a QWS into two electronic states with …
Abstract
In-plane dispersion of the quantum-well states (QWS’s) associated with the electron confinement in metastable epitaxial Ag films grown on the Si (111) 7× 7 and Si (001) 2× 1 surfaces is investigated by angle-resolved photoemission using synchrotron radiation. In contrast to the free-electron-like behavior expected, these QWS’s show intriguing dispersions such as (i) a significant enhancement of the in-plane effective mass with decreasing binding energy and (ii) a splitting of a QWS into two electronic states with different dispersions at off-normal emission. Such unexpected electronic properties of a QWS are obviously related to the substrate band structure. Further the QWS splitting is explained by the energy-dependent phase shift of the film-substrate interface occurring at the substrate band edge.
American Physical Society
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