The potential of InN as a photovoltaic material is described. For solar applications, several
key developments such as p-type doping and solid-state rectifying junctions have yet to be
demonstrated. However, the ability of InGaN materials to optimally span the solar spectrum
offers a tantalizing solution for high-efficiency photovoltaics albeit in an inherently lattice
mismatched material system. For this reason, the characteristics of InN grown on (111)-
oriented germanium and (0001)-plane sapphire substrates via molecular beam epitaxy for …