… InP-based heterojunction bipolar transistors (HBTs) have been the choice for the ultimate
in custom high speed integrated circuit operation. InP-based … versions of InP-based HBT IC …

… InP based devices for high speed applications. Over the past few decades, major aero space
industries have been developing InP based … problem in InP HEMT fabrication. The process …

… After a short description of the fabrication process a typical layer structure is shown and
the … Finally, the RF-performance between GaAs- and InP-based HEMTs and our devices is …

… We also describe the fabrication and characterization of self-aligned InP/InGaAs single-
and double-HBTs (SHBTs and DHBTs) grown by MOCVD. and we describe thier circuit …

… InP-based InAIAsnnGaAs high electron mobility transistors (HEMTs) are one of the most …
Several works concerning the nanofabrication of gates of given gate length L, for InPbased …

… and reliability of InP high electron mobility transistors (InP HEMTs) for future terahertz wave
… performance makes InP HEMT most appropriate transistor technology for the development of …

We fabricated sub-50-nm-gate InAlAs/InGaAs high electron mobility transistors (HEMTs)
lattice-matched to InP substrates. The two-step-recessed gate technology and low-temperature …

… We fabricated the electric double layer transistors based on the semi-insulating InP single
crystals. The n-type transistor operations were successfully observed by reducing the contact …

… 2 shows a schematic sectional view of microwave transistors fabricated using a self-aligned …
for AlGaAs/GaAs HBT fabrication [ 151. The fabrication process for InP-based DHBT’s is …

… materials without a recess stopper, a threshold voltage standard deviation of only about
100 mV is attainable and we can fabricate MMICs integrating less number of transistors[8]. …