Inductively coupled plasma etching of graded-refractive-index layers of TiO2 and SiO2 using an ITO hard mask
Transparent dielectric layers with varying compositions of TiO 2 and SiO 2, and ITO are
deposited on sapphire and Si substrates by using an RF sputter system. Inductively coupled
plasma (ICP) reactive ion etching (RIE) of the ITO hard mask is examined under H 2, CH 4,
and Cl 2 chemical environments. The slope of the sidewall and the etch residue on the
sidewall of the ITO hard mask are controlled by the flow rates of H 2, CH 4, and Cl 2. ICP-RIE
dry etch of TiO 2 and SiO 2 is investigated under fluorinated environments. Comparable etch …
deposited on sapphire and Si substrates by using an RF sputter system. Inductively coupled
plasma (ICP) reactive ion etching (RIE) of the ITO hard mask is examined under H 2, CH 4,
and Cl 2 chemical environments. The slope of the sidewall and the etch residue on the
sidewall of the ITO hard mask are controlled by the flow rates of H 2, CH 4, and Cl 2. ICP-RIE
dry etch of TiO 2 and SiO 2 is investigated under fluorinated environments. Comparable etch …
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