Influence of grain size and surface condition on minority-carrier lifetime in undoped n-BaSi2 on Si (111)
R Takabe, KO Hara, M Baba, W Du… - Journal of applied …, 2014 - pubs.aip.org
We have fabricated approximately 0.5-μm-thick undoped n-BaSi 2 epitaxial films with
various average grain areas ranging from 2.6 to 23.3 μm 2 on Si (111) by molecular beam
epitaxy, and investigated their minority-carrier lifetime properties by the microwave-detected
photoconductivity decay method at room temperature. The measured excess-carrier decay
curves were divided into three parts in terms of decay rate. We characterized the BaSi 2 films
using the decay time of the second decay mode, τ SRH, caused by Shockley-Read-Hall …
various average grain areas ranging from 2.6 to 23.3 μm 2 on Si (111) by molecular beam
epitaxy, and investigated their minority-carrier lifetime properties by the microwave-detected
photoconductivity decay method at room temperature. The measured excess-carrier decay
curves were divided into three parts in terms of decay rate. We characterized the BaSi 2 films
using the decay time of the second decay mode, τ SRH, caused by Shockley-Read-Hall …
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