Influence of the reactor wall composition on radicals' densities and total pressure in Cl2 inductively coupled plasmas: II. During silicon etching
G Cunge, N Sadeghi, R Ramos - Journal of Applied Physics, 2007 - pubs.aip.org
… The impact of the chemical nature of the reactor wall’s coatings on these mole fractions is …
We show that the reactor wall coatings have a huge influence on the radicals densities, but this …
We show that the reactor wall coatings have a huge influence on the radicals densities, but this …
Influence of the reactor wall composition on radicals' densities and total pressure in Cl2 inductively coupled plasmas: I. Without silicon etching
G Cunge, N Sadeghi, R Ramos - Journal of Applied Physics, 2007 - pubs.aip.org
… Ramos; Influence of the reactor wall composition on radicals' densities and total pressure
in Cl 2 inductively coupled plasmas: I. Without silicon etching. Journal of Applied Physics 1 …
in Cl 2 inductively coupled plasmas: I. Without silicon etching. Journal of Applied Physics 1 …
Influence of the reactor wall composition on radicals' densities and total pressure in Cl {sub 2} inductively coupled plasmas: II. During silicon etching
G Cunge, N Sadeghi, R Ramos - Journal of Applied Physics, 2007 - osti.gov
… The impact of the chemical nature of the reactor wall's coatings on these mole fractions is …
We show that the reactor wall coatings have a huge influence on the radicals densities, but this …
We show that the reactor wall coatings have a huge influence on the radicals densities, but this …
Influence of deposition temperature, gas pressure, gas phase composition, and RF frequency on composition and mechanical stress of plasma silicon nitride layers
WAP Claassen, W Valkenburg… - Journal of the …, 1985 - iopscience.iop.org
… , the reactor was pumped down to a pressure of about 0.1 Pa … the influence of total pressure
on the deposition rate, density, … as ions, excited molecules, and radicals are formed. In a low …
on the deposition rate, density, … as ions, excited molecules, and radicals are formed. In a low …
Influence of reactor walls on plasma chemistry and on silicon etch product densities during silicon etching processes in halogen-based plasmas
G Cunge, M Kogelschatz… - Plasma Sources Science …, 2004 - iopscience.iop.org
… Process conditions are 5 mTorr total pressure in an HBr (120 … , control the overall gas
composition and plasma chemistry. … SiCl2 radicals are produced and not lost on the reactor wall. …
composition and plasma chemistry. … SiCl2 radicals are produced and not lost on the reactor wall. …
Modeling of deposition in high density plasma reactors and comparisons of model predictions with experimental measurements
E Meeks, RS Larson, P Ho, C Apblett… - Journal of Vacuum …, 1998 - pubs.aip.org
… measured ion densities, radical densities, and deposition rates … For these secondary species,
we include electron-impact … that the total pressure used in the simulations of Reactor III was …
we include electron-impact … that the total pressure used in the simulations of Reactor III was …
Two-dimensional simulation of polysilicon etching with chlorine in a high density plasma reactor
DP Lymberopoulos… - IEEE transactions on …, 1995 - ieeexplore.ieee.org
… density (>lo" cmP3) to deliver a high flux of ions and radicals … -sections of electron impact
reactions with radicals (which are … as a base case: total pressure 10 mtorr, plasma power 3560 …
reactions with radicals (which are … as a base case: total pressure 10 mtorr, plasma power 3560 …
A self-consistent fluid model for radio-frequency discharges in compared to experiments
GJ Nienhuis, WJ Goedheer, EAG Hamers… - Journal of applied …, 1997 - pubs.aip.org
… Data are compared for various combinations of the total pressure in the reactor, the … the
radical densities making ion-neutral reaction of negligible influence on the partial pressure of the …
radical densities making ion-neutral reaction of negligible influence on the partial pressure of the …
Infrared diode laser absorption spectroscopy measurements of CFX (X=1–3) radical densities in electron cyclotron resonance plasmas employing C4F8, C2F6, CF4, and …
K Miyata, M Hori, T Goto - Journal of Vacuum Science & Technology A …, 1996 - pubs.aip.org
… Total pressure and flow rate were fixed at 0.40 Pa and 3.0 sccm, … condition of the reactor
wall influenced the radical and molecular … We suggest that the composition of CFX radicals in …
wall influenced the radical and molecular … We suggest that the composition of CFX radicals in …
Plasma–wall interactions during silicon etching processes in high-density HBr/Cl2/O2 plasmas
G Cunge, M Kogelschatz, O Joubert… - … Sources Science and …, 2005 - iopscience.iop.org
… phase by electron impact dissociation of SiCl2 (SiCl) radicals, and at the reactor walls by the
… /O2/Ar plasma (120/60/5/10 sccm) at 5 mTorr total pressure and 450 W RF source power. …
… /O2/Ar plasma (120/60/5/10 sccm) at 5 mTorr total pressure and 450 W RF source power. …