SiO X/SiO 2 multilayers have been prepared using magnetron sputtering and annealed in
order to induce the growth of Si nanoparticles in Si-rich sublayers. This sample has
undergone several successive annealing treatments and has been analyzed using a laser-
assisted tomographic atom probe. This allows the phase separation between Si and SiO 2
and the growth process to be studied at the atomic scale as a function of annealing
temperature. Si diffusion coefficient is estimated from the accurate measurement of matrix …