[HTML][HTML] Integrating AlInN interlayers into InGaN/GaN multiple quantum wells for enhanced green emission
Significant enhancement in green emission by integrating a thin AlInN barrier layer, or
interlayer (IL), in an InGaN/GaN multiple quantum well (MQW) is demonstrated. The MQWs
investigated here contains 5 periods of an InGaN QW, a 1 nm thick AlInN IL, and a 10 nm
thick GaN barrier grown by metalorganic chemical vapor deposition. To accommodate the
optimum low-pressure (20 Torr) growth of the AlInN layer a growth flow sequence with
changing pressure is devised. The AlInN IL MQWs are compared to InGaN/AlGaN/GaN …
interlayer (IL), in an InGaN/GaN multiple quantum well (MQW) is demonstrated. The MQWs
investigated here contains 5 periods of an InGaN QW, a 1 nm thick AlInN IL, and a 10 nm
thick GaN barrier grown by metalorganic chemical vapor deposition. To accommodate the
optimum low-pressure (20 Torr) growth of the AlInN layer a growth flow sequence with
changing pressure is devised. The AlInN IL MQWs are compared to InGaN/AlGaN/GaN …
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