Integration of Bimetallic Co–Ni Thick Film-Based Devices for Spintronics
T Mohota, K Nemade - IEEE Transactions on Electron Devices, 2016 - ieeexplore.ieee.org
T Mohota, K Nemade
IEEE Transactions on Electron Devices, 2016•ieeexplore.ieee.orgSpintronics is the exploitation of both the degree of freedom of electron that is spin as well as
the charge, which leads to tremendous development in the field of microelectronic
applications. In this paper, bimetallic Co-Ni-based spin FET device is fabricated, and its
magnetoresistance behavior has been studied. While, spin current as a function of thickness
of Co-Ni-based concatenable spin switch has been studied. The results obtained for spin
current using simulation and experimentation show good agreement.
the charge, which leads to tremendous development in the field of microelectronic
applications. In this paper, bimetallic Co-Ni-based spin FET device is fabricated, and its
magnetoresistance behavior has been studied. While, spin current as a function of thickness
of Co-Ni-based concatenable spin switch has been studied. The results obtained for spin
current using simulation and experimentation show good agreement.
Spintronics is the exploitation of both the degree of freedom of electron that is spin as well as the charge, which leads to tremendous development in the field of microelectronic applications. In this paper, bimetallic Co-Ni-based spin FET device is fabricated, and its magnetoresistance behavior has been studied. While, spin current as a function of thickness of Co-Ni-based concatenable spin switch has been studied. The results obtained for spin current using simulation and experimentation show good agreement.
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