Investigation of magnetic and electronic coupling between two (Ga, Mn) As layers in (Ga, Mn) As∕ GaAs∕(Ga, Mn) As magnetic tunnel junctions
The coupling between the two magnetic layers in a series of (Ga, Mn) As∕ Ga As∕(Ga, Mn)
As magnetic tunnel junctions with different nonmagnetic spacer thicknesses t NM were
studied by magnetization and planar Hall effect (PHE) measurements. The PHE data
indicate that the magnetization reversals of the two layers are strongly correlated when the t
NM is less than 3 nm and are independent when t NM is larger than 15 nm. From the
results, it is concluded that considerable redistribution of hole wave functions plays a major …
As magnetic tunnel junctions with different nonmagnetic spacer thicknesses t NM were
studied by magnetization and planar Hall effect (PHE) measurements. The PHE data
indicate that the magnetization reversals of the two layers are strongly correlated when the t
NM is less than 3 nm and are independent when t NM is larger than 15 nm. From the
results, it is concluded that considerable redistribution of hole wave functions plays a major …
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