Investigation of mask selectivities and diamond etching using microwave plasma-assisted etching
DT Tran, C Fansler, TA Grotjohn, DK Reinhard… - Diamond and Related …, 2010 - Elsevier
Diamond etching is characterized using a microwave ECR plasma reactor with regard to
etch rate selectivity, surface morphology, and feature size. Etching is performed on diamond
substrates using a variety of etch mask materials including aluminum, titanium, gold, silicon
dioxide and silicon nitride. The etch feed gases are combinations of oxygen, sulfur
hexafluoride and argon. Aluminum masks provided the highest selectivity ratio of diamond
etch rate to mask etch rate, both with and without SF6 in the oxygen/argon feedgas …
etch rate selectivity, surface morphology, and feature size. Etching is performed on diamond
substrates using a variety of etch mask materials including aluminum, titanium, gold, silicon
dioxide and silicon nitride. The etch feed gases are combinations of oxygen, sulfur
hexafluoride and argon. Aluminum masks provided the highest selectivity ratio of diamond
etch rate to mask etch rate, both with and without SF6 in the oxygen/argon feedgas …
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