Investigation of silicon wafers thermal degradation by photoluminescence decay measurements
This paper presents our study on the effect of thermal treatment to bulk silicon properties
using careful surface chemical treatments and passivation. The procedures used for
estimating carrier lifetime in silicon include transient photoconductance decay (TPD),
photoluminescence (PL) intensity and PL decay time imaging. To exclude any effect of
graphite succeptor contamination on the measurements, 10 μm-thick silicon layer was
removed from each side of the wafers by etching (texturing) in KOH+ IPA solution. All the …
using careful surface chemical treatments and passivation. The procedures used for
estimating carrier lifetime in silicon include transient photoconductance decay (TPD),
photoluminescence (PL) intensity and PL decay time imaging. To exclude any effect of
graphite succeptor contamination on the measurements, 10 μm-thick silicon layer was
removed from each side of the wafers by etching (texturing) in KOH+ IPA solution. All the …
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