Low restoration-energy differential spin Hall effect MRAM for high-speed nonvolatile SRAM application
S Shreya, BK Kaushik - 20th International Symposium on …, 2019 - ieeexplore.ieee.org
20th International Symposium on Quality Electronic Design (ISQED), 2019•ieeexplore.ieee.org
A differential spin Hall effect (DSHE) based nonvolatile static random access memory,
named as DSNVM, is proposed in this paper. DSNVM consist of a conventional 6T SRAM
cell and a DSHE as nonvolatile element. The data present at storage nodes of SRAM are
complementary to each other and are stored in DSHE memory counterpart. The stored data
can be retrieved once power supply is resumed. The analysis of DSNVM cell is carried out
and is compared with other spintronics based NVSRAMs. DSNVM shows 40% faster data …
named as DSNVM, is proposed in this paper. DSNVM consist of a conventional 6T SRAM
cell and a DSHE as nonvolatile element. The data present at storage nodes of SRAM are
complementary to each other and are stored in DSHE memory counterpart. The stored data
can be retrieved once power supply is resumed. The analysis of DSNVM cell is carried out
and is compared with other spintronics based NVSRAMs. DSNVM shows 40% faster data …
A differential spin Hall effect (DSHE) based nonvolatile static random access memory, named as DSNVM, is proposed in this paper. DSNVM consist of a conventional 6T SRAM cell and a DSHE as nonvolatile element. The data present at storage nodes of SRAM are complementary to each other and are stored in DSHE memory counterpart. The stored data can be retrieved once power supply is resumed. The analysis of DSNVM cell is carried out and is compared with other spintronics based NVSRAMs. DSNVM shows 40% faster data restoration and 16.7% lesser energy consumption as compared to SHE based NVSRAM.
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