Low-noise epitaxial graphene on SiC Hall effect element for commercial applications
In this report, we demonstrate a complete Hall effect element that is based on quasi-free-
standing monolayer graphene synthesized on a semi-insulating on-axis Si-terminated 6H-
SiC substrate in an epitaxial Chemical Vapor Deposition process. The device offers the
current-mode sensitivity of 87 V/AT and low excess noise (Hooge's parameter α H< 2× 10−
3) enabling room-temperature magnetic resolution of 650 nT/Hz 0.5 at 10 Hz, 95 nT/Hz 0.5
at 1 kHz, and 14 nT/Hz 0.5 at 100 kHz at the total active area of 0.1275 mm 2. The element is …
standing monolayer graphene synthesized on a semi-insulating on-axis Si-terminated 6H-
SiC substrate in an epitaxial Chemical Vapor Deposition process. The device offers the
current-mode sensitivity of 87 V/AT and low excess noise (Hooge's parameter α H< 2× 10−
3) enabling room-temperature magnetic resolution of 650 nT/Hz 0.5 at 10 Hz, 95 nT/Hz 0.5
at 1 kHz, and 14 nT/Hz 0.5 at 100 kHz at the total active area of 0.1275 mm 2. The element is …
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