Luminescence and reflectivity studies of undoped, n-and p-doped GaN on (0001) sapphire
M Leroux, B Beaumont, N Grandjean… - Materials Science and …, 1997 - Elsevier
GaN grown by three different methods (MOVPE, GSMBE and HVPE) have been studied
using temperature (T) dependent reflectivity and photoluminescence (PL). Both non
intentionally doped (MOVPE, GSMBE and HVPE), n-and p-doped samples (MOVPE and
GSMBE) have been investigated. Reflectivity is used to obtain intrinsic transition energies.
These energies vary with the amount of strain in the crystal. Growth parameters influencing
this strain state are discussed. Using MOVPE (Tg≈ 1050° C) and GSMBE (Tg≈ 800° C), it …
using temperature (T) dependent reflectivity and photoluminescence (PL). Both non
intentionally doped (MOVPE, GSMBE and HVPE), n-and p-doped samples (MOVPE and
GSMBE) have been investigated. Reflectivity is used to obtain intrinsic transition energies.
These energies vary with the amount of strain in the crystal. Growth parameters influencing
this strain state are discussed. Using MOVPE (Tg≈ 1050° C) and GSMBE (Tg≈ 800° C), it …
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