Luminescence properties of InxGa1− xN (x∼ 0.04) films grown by metal organic vapour phase epitaxy
In x Ga 1− x N (x∼ 0.04) films are grown by metal organic vapour phase epitaxy. For the
samples grown on GaN directly, the relaxation of InGaN happens when its thickness is
beyond a critical value. A broad band is observed in the luminescence spectrum, and its
intensity increases with the increasing degree of relaxation. Secondary ion mass
spectrometry measurement rules out the possibility of the broad band originating from
impurities in InGaN. The combination of the energy-dispersive X-ray spectra and the …
samples grown on GaN directly, the relaxation of InGaN happens when its thickness is
beyond a critical value. A broad band is observed in the luminescence spectrum, and its
intensity increases with the increasing degree of relaxation. Secondary ion mass
spectrometry measurement rules out the possibility of the broad band originating from
impurities in InGaN. The combination of the energy-dispersive X-ray spectra and the …