This paper presents a physically based model for the metal-oxide-semiconductor (MOS)
transistor suitable for analysis and design of analog integrated circuits. Static and dynamic …

… the MOS transistor or the metal-oxide-semiconductor fieldeffect transistor (MOSFET) were
… Research Corporation concerning silicon MOS aging and failure mechanisms as well as reli…

… Mismatch that can be observed between the parameters of a group of equally designed
devices (MOS transistors in this paper) is the result of several random processes which occur …

… that are part of the RF MOS transistor, it is often too complex … of the MOS transistor compact
model, so that the MOS transistor … have been added outside the MOS model since the internal …

… of an Si-Si02 MOS transistor. Even so, the annual sales of MOS based semiconductor …
The impact on our daily lives imparted by these MOS based IC’s is just beginning to be felt. …

… Abstract—This paper presents a physics-based analytical model for the MOS transistor …
Explicit MOS transistor expressions are then derived, including incomplete dopant ionization…

… tain, and Shockley ended up demonstrating transistor action and brilliantly elucidating its
secret: the predictable MOS transistor turned out to operate as a bipolar transistor [1], [2]. The …

… transistors are expt oited and mastered. Analog designers therefore need a model of the MOS
transistor … structural source-drain symmetry of the transistor. A good model for analog must …

… This requires MOS transistor compact models that are accurate over a wide … MOS transistor
modeling for RF IC design. Section II describes the equivalent circuit of an RF MOS transistor …

… of capacitance effects in MOS transistors … Any theory of MOS transistor operation which
predicts the total gate and bulk charges can be used to find QG, QB, and Qs + QD. …