Magnetic properties of epitaxially grown semiconducting thin films by pulsed laser deposition
We have characterized Zn 1− x Co x O (x= 0.25) films grown on sapphire (0001) substrates
by pulsed laser deposition using various growth conditions to investigate the growth
condition dependence of properties of Co-doped ZnO films. The substrate temperature (TS)
was varied from 300 to 700° C and the O 2 pressure (PO 2) from 10− 6 to 10− 1 Torr. When
TS is relatively low (≲ 600° C), homogeneous alloy films with a wurtzite ZnO structure are
grown and predominantly paramagnetic, whereas inhomogeneous films of wurtzite ZnO …
by pulsed laser deposition using various growth conditions to investigate the growth
condition dependence of properties of Co-doped ZnO films. The substrate temperature (TS)
was varied from 300 to 700° C and the O 2 pressure (PO 2) from 10− 6 to 10− 1 Torr. When
TS is relatively low (≲ 600° C), homogeneous alloy films with a wurtzite ZnO structure are
grown and predominantly paramagnetic, whereas inhomogeneous films of wurtzite ZnO …