Magnetoresistance of 3d transition-metal-doped epitaxial ZnO thin films
Z Jin, K Hasegawa, T Fukumura, YZ Yoo… - Physica E: Low …, 2001 - Elsevier
Epitaxial ZnO thin films co-doped with 3d transition metal (TM)(TM= Cr, Mn, Fe, Co, Ni and
Cu) and 1 mol% Al were fabricated as a series of oxide-diluted magnetic semiconductors by
pulsed-laser-deposition method. Magnetoresistance (MR) of the films was measured to
investigate the s–d exchange interaction between the conducting s electron spins and the d
electron spins localized at the magnetic TM impurities. A variety of MR behaviors were
observed depending on the different TM impurities. It is deduced that the negative MR …
Cu) and 1 mol% Al were fabricated as a series of oxide-diluted magnetic semiconductors by
pulsed-laser-deposition method. Magnetoresistance (MR) of the films was measured to
investigate the s–d exchange interaction between the conducting s electron spins and the d
electron spins localized at the magnetic TM impurities. A variety of MR behaviors were
observed depending on the different TM impurities. It is deduced that the negative MR …
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