Laterally overgrown structures as substrates for lattice mismatched epitaxy

ZR Zytkiewicz - Thin Solid Films, 2002 - Elsevier
… of this process on structural and optical quality of overgrown material, interaction of ELO …
growth techniques used and different properties of materials grown. This clearly means that they …

[图书][B] Lattice engineering: technology and applications

S Wang - 2012 - books.google.com
… a substrate underneath to avoid deleterious structural defects… of materials on a limited
number of available substrates. To … Arrays Matthews's theory of lattice-mismatched growth using …

Mechanical nano-patterning: toward highly-aligned Ge self-assembly on low lattice mismatched GaAs substrate

G Dushaq, M Rasras - Scientific reports, 2019 - nature.com
… -stamped structure performed on GaAs (110) substrate using … quality Ge lasers (the ultimate
goal of group-IV photonics) 23 . … The images or other third party material in this article are …

Compliant substrates

S Wang - Lattice Engineering: Technology and Applications …, 2013 - api.taylorfrancis.com
… could be grown on a lattice mismatched substrate if the lattice … However, if the CS is suspended
without any mechanical … with the same structure grown on a GaAs substrate. This gives …

Lattice engineered compliant substrate for defect-free heteroepitaxial growth

FE Ejeckam, YH Lo, S Subramanian, HQ Hou… - Applied physics …, 1997 - pubs.aip.org
… A stressor layer was deposited on suspended, thin 600 Å … aforementioned compliant substrates:
The structures are too … compliant to lattice-mismatched growths on its surface. In creating …

Wafer bonding technology and its applications in optoelectronic devices and materials

ZH Zhu, FE Ejeckam, Y Qian, J Zhang… - IEEE Journal of …, 1997 - ieeexplore.ieee.org
… on a thin membrane suspended from the semiconductor surface. The … substrate with a 22
twist angle to form the compliant substrate. An In Ga As layer, which is 1.5% lattice mismatched

Suspended-ultrathin Si membrane on SOI: a novel structure to reduce thermal stress of GaN epilayer

Y Song, K Wang, P Du, Z Cheng - … Conference Series: Materials …, 2020 - iopscience.iop.org
… between substrate and lattice-mismatched epilayer. The strain partitioning in a structure
a very critical factor in dislocation formation and material quality improvement, and thus is a …

Defect-free single-crystal SiGe: a new material from nanomembrane strain engineering

DM Paskiewicz, B Tanto, DE Savage, MG Lagally - Acs Nano, 2011 - ACS Publications
… and demonstrate their use as substrates for technologically … problems associated with lattice
mismatched epitaxial growth… and is suspended in the KOH solution. For a sufficiently high …

Application of Mobility Spectrum Analysis to Modern Multi-layered IR Device Material

AE Brown - 2016 - indigo.uic.edu
structures are explored with regards to substrate choice, namely lattice-matched CdZnTe and
lattice-mismatched … reveal that growth on lattice-mismatched substrates leads to dislocation …

Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies

H Morkoc, S Strite, GB Gao, ME Lin… - Journal of Applied …, 1994 - pubs.aip.org
… for the growth of high-quality substrate material. 6H Sic substrates have been prepared in the
… SIC UV photodiode device structure fabricated from commercial 6H substrates on which a …