Measurement of the angle of dangling-bond photoemission from cleaved silicon
JE Rowe, MM Traum, NV Smith - Physical Review Letters, 1974 - APS
JE Rowe, MM Traum, NV Smith
Physical Review Letters, 1974•APSThe surface state near the top of the valence bands on the cleaved (111) face of Si has been
investigated by using angular-resolved photoemission spectroscopy at the photon energy
10.2 eV. Anisotropy, dispersion, and splitting are observed. The results are consistent with
an appreciable admixture of S 2 character in this surface-state band.
investigated by using angular-resolved photoemission spectroscopy at the photon energy
10.2 eV. Anisotropy, dispersion, and splitting are observed. The results are consistent with
an appreciable admixture of S 2 character in this surface-state band.
Abstract
The surface state near the top of the valence bands on the cleaved (111) face of Si has been investigated by using angular-resolved photoemission spectroscopy at the photon energy 10.2 eV. Anisotropy, dispersion, and splitting are observed. The results are consistent with an appreciable admixture of S 2 character in this surface-state band.
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