In the present work, we investigate some mechanical and electrical properties of a Chemical
Vapor Deposition (CVD)-grown graphene layer transferred on 50 nm-thick Ge 2 Sb 2 Te 5
chalcogenide and discuss the possible application of graphene as a scaled contact
replacing metal lines in phase-change memory devices. At first, the graphene-chalcogenide
interface was extensively investigated. The expected chemical composition was confirmed
by means of Electron Energy Loss Spectrometry (EELS), and the absence of bond …

Non volatile memories based on Phase Change Materials, eg Ge2Sb2Te5. are considered
possible candidates in the present market scenario. The Extreme Ultraviolet Lithography
(EUVL) technology, actually, allows to scale the memory device structures in the node of 18-
20 nm. The capability of increasing the bits in the storage devices is one of the most
important requests of the market for Non-Volatile Memory that remains one of key product
segment for the mass production. The scaling possibilities of PCM must be coupled to the …