[图书][B] Wafer bonding: applications and technology
M Alexe, U Gösele - 2013 - books.google.com
… Materials Science covers the complete spectrum of materials … constant by making the plates,
or the spacing means, of fused … -transistors, eg currentinjection transistors and/or field-effect …
or the spacing means, of fused … -transistors, eg currentinjection transistors and/or field-effect …
Uniform and ultrathin high-κ gate dielectrics for two-dimensional electronic devices
… With the technique, we fabricate graphene radio-frequency … field-effect transistors (MOSFETs)
(such as the 14-nm FinFET … technology featuring fully-depleted tri-gate transistors, self-…
(such as the 14-nm FinFET … technology featuring fully-depleted tri-gate transistors, self-…
Integrating high-quality dielectrics with one-nanometer equivalent oxide thickness on two-dimensional electronic devices
… high-κ dielectrics that fully meet the roadmap requirements for low… field compared to prior
methods. Taking advantage of the … effect transistors (MOSFETs) (eg Intel 14 nm FinFET structure…
methods. Taking advantage of the … effect transistors (MOSFETs) (eg Intel 14 nm FinFET structure…
[图书][B] System Level ESD Protection
V Vashchenko, M Scholz - 2014 - Springer
… device concepts like 3D transistors (multi-gate-FET, FINFET), as … Augusto Tazzoli for
his dedicated effort to complete a detailed … 1.19) or by the substrate-isolated stacked back-to-back …
his dedicated effort to complete a detailed … 1.19) or by the substrate-isolated stacked back-to-back …
Microwave Semiconductors Devices: Oscillators, Amplifiers, and Circuit
PK Chaturvedi, PK Chaturvedi - Microwave, Radar & RF Engineering: With …, 2018 - Springer
… 6.7, we observe that I ds is fully controlled by the field of depletion region created by the …
devices, with substrate isolated in Jn-FET and MESFET, while in bipolar transistor, the substrate …
devices, with substrate isolated in Jn-FET and MESFET, while in bipolar transistor, the substrate …