This paper presents millimeter wave monolithic microwave integrated circuit (MMIC) low noise amplifiers using a 0.15 µm commercial pHEMT process. After carefully investigating design considerations for millimeter‐wave applications, with emphasis on the active device model and electomagnetic (EM) simulation, we designed two singleended low noise amplifiers, one for Q‐band and one for V‐band. The Q‐band two stage amplifier showed an average noise figure of 2.2 dB with an 18.3 dB average gain at 44 GHz. The V‐band two stage amplifier showed an average noise figure of 2.9 dB with a 14.7 dB average gain at 65 GHz. Our design technique and model demonstrates good agreement between measured and predicted results. Compared with the published data, this work also presents state‐of‐the‐art performance in terms of the gain and noise figure.