Miscibility gap calculation for Ga1-xInxNyAs1-y including strain effects
D Schlenker, T Miyamoto, Z Pan… - Compound …, 2021 - taylorfrancis.com
Compound Semiconductors 1998, 2021•taylorfrancis.com
A miscibility gap calculation including strain effects was carried out to evaluate the prospect
of the GalnNAs material system. We used the delta lattice parameter model and the regular
solution model to calculate the Gibbs free energy. The contribution caused by the strain
energy due to the mismatch between substrate and epitaxial layer was added. The spinodal
points were computed for the GalnAs, GaNAs and GalnNAs material system. The result of
the calculation depends on the choice of substrate and the employed material parameters …
of the GalnNAs material system. We used the delta lattice parameter model and the regular
solution model to calculate the Gibbs free energy. The contribution caused by the strain
energy due to the mismatch between substrate and epitaxial layer was added. The spinodal
points were computed for the GalnAs, GaNAs and GalnNAs material system. The result of
the calculation depends on the choice of substrate and the employed material parameters …
A miscibility gap calculation including strain effects was carried out to evaluate the prospect of the GalnNAs material system. We used the delta lattice parameter model and the regular solution model to calculate the Gibbs free energy. The contribution caused by the strain energy due to the mismatch between substrate and epitaxial layer was added. The spinodal points were computed for the GalnAs, GaNAs and GalnNAs material system. The result of the calculation depends on the choice of substrate and the employed material parameters. The calculation predicts that GalnNAs/GaAs quantum well structures for 1.3 pm emission can be stabilized by strain effects against spinodal decomposition.
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