Mobility enhancement of strained GaSb p-channel metal–oxide–semiconductor field-effect transistors with biaxial compressive strain
YW Chen, Z Tan, LF Zhao, J Wang, YZ Liu… - Chinese …, 2016 - iopscience.iop.org
Various biaxial compressive strained GaSb p-channel metal–oxide–semiconductor field-
effect transistors (MOSFETs) are experimentally and theoretically investigated. The biaxial
compressive strained GaSb MOSFETs show a high peak mobility of 638 cm 2/V· s, which is
3.86 times of the extracted mobility of the fabricated GaSb MOSFETs without strain.
Meanwhile, first principles calculations show that the hole effective mass of GaSb depends
on the biaxial compressive strain. The biaxial compressive strain brings a remarkable …
effect transistors (MOSFETs) are experimentally and theoretically investigated. The biaxial
compressive strained GaSb MOSFETs show a high peak mobility of 638 cm 2/V· s, which is
3.86 times of the extracted mobility of the fabricated GaSb MOSFETs without strain.
Meanwhile, first principles calculations show that the hole effective mass of GaSb depends
on the biaxial compressive strain. The biaxial compressive strain brings a remarkable …
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