Modeling and simulations of MOSQWell transistor future building block for optical communication
M Bendayan, A Karsenty… - 2016 IEEE International …, 2016 - ieeexplore.ieee.org
M Bendayan, A Karsenty, A Chelly
2016 IEEE International Conference on the Science of Electrical …, 2016•ieeexplore.ieee.orgA new type of silicon MOSFET transistor, coupling both electronic and optical properties, is
developed in order to overcome the indirect silicon bandgap constraint, and to serve as a
future light emitting device in NIR [0.8-2μm] range, as part of a new building block in
integrated circuits allowing ultra-high speed processors. Such QW structure enables discrete
energy levels for light emission. Model and simulations are presented.
developed in order to overcome the indirect silicon bandgap constraint, and to serve as a
future light emitting device in NIR [0.8-2μm] range, as part of a new building block in
integrated circuits allowing ultra-high speed processors. Such QW structure enables discrete
energy levels for light emission. Model and simulations are presented.
A new type of silicon MOSFET transistor, coupling both electronic and optical properties, is developed in order to overcome the indirect silicon bandgap constraint, and to serve as a future light emitting device in NIR [0.8-2μm] range, as part of a new building block in integrated circuits allowing ultra-high speed processors. Such QW structure enables discrete energy levels for light emission. Model and simulations are presented.
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