NS-GAAFET compact modeling: technological challenges in Sub-3-nm circuit performance
NanoSheet-Gate-All-Around-FETs (NS-GAAFETs) are commonly recognized as the future
technology to push the digital node scaling into the sub-3 nm range. NS-GAAFETs are
expected to replace FinFETs in a few years, as they provide highly electrostatic gate control
thanks to the GAA structure, with four sides of the NS channel entirely enveloped by the
gate. At the same time, the NS rectangular cross-section is demonstrated to be effective in its
driving strength thanks to its high saturation current, tunable through the NS width used as a …
technology to push the digital node scaling into the sub-3 nm range. NS-GAAFETs are
expected to replace FinFETs in a few years, as they provide highly electrostatic gate control
thanks to the GAA structure, with four sides of the NS channel entirely enveloped by the
gate. At the same time, the NS rectangular cross-section is demonstrated to be effective in its
driving strength thanks to its high saturation current, tunable through the NS width used as a …
[PDF][PDF] NS-GAAFET Compact Modeling: Technological Challenges in Sub-3-nm Circuit Performance. Electronics 2023, 12, 1487
NanoSheet-Gate-All-Around-FETs (NS-GAAFETs) are commonly recognized as the future
technology to push the digital node scaling into the sub-3 nm range. NS-GAAFETs are
expected to replace FinFETs in a few years, as they provide highly electrostatic gate control
thanks to the GAA structure, with four sides of the NS channel entirely enveloped by the
gate. At the same time, the NS rectangular cross-section is demonstrated to be effective in its
driving strength thanks to its high saturation current, tunable through the NS width used as a …
technology to push the digital node scaling into the sub-3 nm range. NS-GAAFETs are
expected to replace FinFETs in a few years, as they provide highly electrostatic gate control
thanks to the GAA structure, with four sides of the NS channel entirely enveloped by the
gate. At the same time, the NS rectangular cross-section is demonstrated to be effective in its
driving strength thanks to its high saturation current, tunable through the NS width used as a …
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