The performance of earth abundant Cu 2 ZnSnS 4 (CZTS) material is limited by high deficit
of open circuit voltage (V OC) which is mainly due to the easy formation of Cu Zn antisite
defects. Suppression of Cu Zn defects is thus inevitably required for further developments in
CZTS based solar cells. We studied systematic increase of Ag doping in CZTS thin film and
investigated the nanoscale electrical properties using Kelvin probe force microscopy and
current sensing atomic force microscopy (CAFM) to probe Cu Zn defects. Crystallographic …

The non-stochiometric deviations in CZTS often results in certain detrimental point defects
that act as trap centers causing non-radiative recombination and potential fluctuations,
eventually results in large open circuit voltage (V OC) deficit in CZTS solar cells. Cationic
substitution in CZTS layer is one of the leading approaches to capture the great potential of
kesterite solar cells for future cost-effective photovoltaic technology. Here, chromium
incorporation in CZTS is studied for cationic substitution in CZTS layer, as it renders multiple …