[HTML][HTML] Near ultraviolet enhanced 4H-SiC Schottky diode
Silicon carbide Schottky diodes with thick i-regions are reported. Compared with previously
reported pin photodiodes, a shift of the absorption peak from 270 nm to 350 nm was
observed. The responsivity curves of the Schottky diode are modeled and compared with the
experimental data.
reported pin photodiodes, a shift of the absorption peak from 270 nm to 350 nm was
observed. The responsivity curves of the Schottky diode are modeled and compared with the
experimental data.
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