… light-emitting diodes Growth of low TDD AlN layers on sapphire Marked increases in IQE
Aluminum gallium nitride-based DUV-LEDs fabricated on high-quality aluminum nitride …

… , device design, and fabrication need to be overcome. This review provides a detailed
overview of nitride-… state-of-the-art light-emitting devices. Besides delineating the scientific and …

… We discuss the challenges of light-emitting diodes in view of their application to solid-state
lighting. The requirement is to at least displace the quite efficient fluorescent, sodium, and …

… suitable for light emitting devices. … nitride semiconductors are useful for light emitting devices
especially in the short wavelength regions. Figure 1 shows the lattice constant of III-V nitride …

… In this investigation, we present a metal-nitride-oxide-semiconductor light-emitting device
(MNOSLED) as a proof of concept for “Silicon-based Lighting” (SiL). These first non-optimized …

… nitride-based LEDs, we discuss what can improve the external quantum efficiency of nitride-…
Each of these light-emitting devices uses an InGaN active layer instead of a GaN active layer…

… 1 Introduction Major developments in wide-gap III–V nitride semiconductors have recently
… it is difficult to fabricate an efficient light-emitting device using a GaN active layer. The InGaN …

… III-nitrides based light emitting … nitrides based light emitting diodes, material property and
epitaxy technology, InGaN/GaN multiple-quantum-well-structured blue and green light emitting …

… material parameters of nitride semiconductors which are crucial ingredients of device models.
… -of-the-art devices, from transistors to light-emitting diodes to laser diodes. Several novel …

… [80] indicated that the m orientation had a higher potential for light-emitting devices than
the a orientation, recent accomplishments on a-plane LEDs emerged in 2008 have …