Thin films of ZrSe2 have been prepared on stainless steel and fluorine doped tin oxide (FTO) coated glass substrates using electrodeposition technique at potentiostatic mode. Double distilled water containing precursors Zr and Se with Ethylene Diamine Tetra-acetic Acid (EDTA) disodium salt as a complexing agent to obtain good quality deposits by controlling the rate of reaction. The preparative parameters such as concentration of bath, deposition time, bath temperature and pH of the bath have been optimized. X-ray diffraction (XRD) study reveals that the deposited ZrSe2 thin film is polycrystalline with hexagonal crystal structure. Optical absorption shows the presence of direct transition and band gap energy is found to be 1.5 eV.