Numerical simulation of magnetization process in antiferromagnetic–ferromagnetic bilayer with compensated interface

NA Usov, SA Gudoshnikov - Journal of magnetism and magnetic materials, 2006 - Elsevier
Journal of magnetism and magnetic materials, 2006Elsevier
The properties of antiferromagnetic (AFM)–ferromagnetic (FM) bilayer have been studied
using self-consistent mean-field approximation for Heisenberg Hamiltonian. The
perpendicular exchange coupling has been revealed in a bilayer with a compensated
interface. For a uniform AFM film a symmetrical hysteresis loop has been calculated,
because the transverse instability develops within the AFM film at certain critical value of
external magnetic field. On the other hand, shifted hysteresis loop with a finite exchange …
The properties of antiferromagnetic (AFM)–ferromagnetic (FM) bilayer have been studied using self-consistent mean-field approximation for Heisenberg Hamiltonian. The perpendicular exchange coupling has been revealed in a bilayer with a compensated interface. For a uniform AFM film a symmetrical hysteresis loop has been calculated, because the transverse instability develops within the AFM film at certain critical value of external magnetic field. On the other hand, shifted hysteresis loop with a finite exchange bias field has been obtained for a non-uniform AFM film consisting of various AFM domains with perpendicular directions of the easy anisotropy axes.
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