Observation of the D‐center in 6H‐SiC p‐n diodes grown by chemical vapor deposition
MS Mazzola, SE Saddow, PG Neudeck… - Applied physics …, 1994 - pubs.aip.org
The D‐center in 6 H‐SiC is a boron‐related deep hole trap observed previously in LPE‐
grown 6 H‐SiC diodes. We report deep level transient spectroscopy (DLTS) measurements
in which the D‐center signature is observed in high‐purity n‐and p‐type epitaxial layers
formed by chemical vapor deposition (CVD). An activation energy of 0.58 eV and a capture
cross section between 1× 10− 14 cm2 and 3× 10− 14 cm2 was determined for this level.
Even though the D‐center in these diodes is thought to arise from unintended trace …
grown 6 H‐SiC diodes. We report deep level transient spectroscopy (DLTS) measurements
in which the D‐center signature is observed in high‐purity n‐and p‐type epitaxial layers
formed by chemical vapor deposition (CVD). An activation energy of 0.58 eV and a capture
cross section between 1× 10− 14 cm2 and 3× 10− 14 cm2 was determined for this level.
Even though the D‐center in these diodes is thought to arise from unintended trace …
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