Observation of transition metals at shunt locations in multicrystalline silicon solar cells
T Buonassisi, OF Vyvenko, AA Istratov… - Journal of Applied …, 2004 - pubs.aip.org
By employing a combination of analytical tools including lock-in thermography and
synchrotron-based x-ray fluorescence microscopy, transition metals have been identified at
shunting locations in two types of low-cost multicrystalline silicon (mc-Si) solar cell materials:
cast multicrystalline and ribbon growth on substrate (RGS). At a shunting location in the cast
mc-Si cell, silver and titanium, both contact strip materials, have been identified at the
shunting location, suggesting a process-induced error related to contact metallization. At a …
synchrotron-based x-ray fluorescence microscopy, transition metals have been identified at
shunting locations in two types of low-cost multicrystalline silicon (mc-Si) solar cell materials:
cast multicrystalline and ribbon growth on substrate (RGS). At a shunting location in the cast
mc-Si cell, silver and titanium, both contact strip materials, have been identified at the
shunting location, suggesting a process-induced error related to contact metallization. At a …