Optically pumped AlGaN quantum‐well lasers at sub‐250 nm grown by MOCVD on AlN substrates
physica status solidi (c), 2014•Wiley Online Library
In this study, we employed bulk (0001) AlN substrates for the metalorganic chemical vapor
deposition growth of AlGaN multi‐quantum‐well heterostructures in an Aixtron 6× 2 ″close‐
coupled showerhead reactor. The wafers were fabricated into cleaved bars with a cavity
length of∼ 1 mm. Two different layer structure designs are presented in this work. Both laser
bars were optically pumped by a pulsed 193 nm ArF excimer laser at room temperature. The
lasing wavelengths are 243.5 nm and 245.3 nm with threshold power density 427 kW/cm2 …
deposition growth of AlGaN multi‐quantum‐well heterostructures in an Aixtron 6× 2 ″close‐
coupled showerhead reactor. The wafers were fabricated into cleaved bars with a cavity
length of∼ 1 mm. Two different layer structure designs are presented in this work. Both laser
bars were optically pumped by a pulsed 193 nm ArF excimer laser at room temperature. The
lasing wavelengths are 243.5 nm and 245.3 nm with threshold power density 427 kW/cm2 …
Abstract
In this study, we employed bulk (0001) AlN substrates for the metalorganic chemical vapor deposition growth of AlGaN multi‐quantum‐well heterostructures in an Aixtron 6 × 2″ close‐coupled showerhead reactor. The wafers were fabricated into cleaved bars with a cavity length of ∼1 mm. Two different layer structure designs are presented in this work. Both laser bars were optically pumped by a pulsed 193 nm ArF excimer laser at room temperature. The lasing wavelengths are 243.5 nm and 245.3 nm with threshold power density 427 kW/cm2 and 297 kW/cm2, respectively. Both laser bars showed transverse electric‐polarization‐dominated optical emission when operating above threshold. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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