Optimization of a buffer layer for cubic silicon carbide growth on silicon substrates
A procedure for the optimization of a 3C–SiC buffer layer for the deposition of 3C–SiC/(001)
Si is described. After a standard carbonization at 1125° C, SiH 4 and C 3 H 8 were added to
the gas phase while the temperature was raised from 1125° C to the growth temperature of
1380° C with a controlled temperature ramp to grow a thin SiC layer. The quality and the
crystallinity of the buffer layer and the presence of voids at the SiC/Si interface are related to
the gas flow and to the heating ramp rate. In order to improve the buffer quality the SiH 4 and …
Si is described. After a standard carbonization at 1125° C, SiH 4 and C 3 H 8 were added to
the gas phase while the temperature was raised from 1125° C to the growth temperature of
1380° C with a controlled temperature ramp to grow a thin SiC layer. The quality and the
crystallinity of the buffer layer and the presence of voids at the SiC/Si interface are related to
the gas flow and to the heating ramp rate. In order to improve the buffer quality the SiH 4 and …
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