[HTML][HTML] Optimization of annealing conditions to enhance thermoelectric performance of electrodeposited p-type BiSbTe thin films
In this work, we report the optimization of annealing process to improve the thermoelectric
properties of pulse electrodeposited bismuth antimony telluride (Bi–Sb–Te) films by varying
the annealing time-temperature profile. The innovative approach of sandwiched Te in
between the Bi–Sb–Te layers aids in compensating the loss of tellurium during the
annealing of BiSbTe thin films. An optimized Seebeck coefficient of 90.5 µV/K along with a
power factor of 240 µW/mK 2 is achieved for samples annealed at 350 C for 1 h under N 2 …
properties of pulse electrodeposited bismuth antimony telluride (Bi–Sb–Te) films by varying
the annealing time-temperature profile. The innovative approach of sandwiched Te in
between the Bi–Sb–Te layers aids in compensating the loss of tellurium during the
annealing of BiSbTe thin films. An optimized Seebeck coefficient of 90.5 µV/K along with a
power factor of 240 µW/mK 2 is achieved for samples annealed at 350 C for 1 h under N 2 …
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