Orientation effect in electronic properties of silicon wires
AB Filonov, GV Petrov, VA Novikov… - Applied physics …, 1995 - pubs.aip.org
Electronic properties of (100),(110), and (111) oriented H‐terminated silicon quantum‐size
wires have been calculated within the self‐consistent LCAO method. The quantum
confinement induced direct band gap only appears in the (100) wires. Surface silicon d and
p electrons are found to be responsible for the bottom of the conduction band while the top
of the valence band are formed by p electrons of the core atoms. Possible reconstruction of
the wire surface is discussed.
wires have been calculated within the self‐consistent LCAO method. The quantum
confinement induced direct band gap only appears in the (100) wires. Surface silicon d and
p electrons are found to be responsible for the bottom of the conduction band while the top
of the valence band are formed by p electrons of the core atoms. Possible reconstruction of
the wire surface is discussed.
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