Orientation-dependent stress relaxation in hetero-epitaxial 3C-SiC films
Residual stresses in epitaxial 3C-SiC films on silicon, for chosen growth conditions, appear
determined by their growth orientation. Stress evaluation locally with Raman spectroscopy,
and across a 150 mm wafer with curvature measurements, indicate that thin films can be
grown on Si (100) with residual tensile stresses as low as 150 MPa. However, films on Si
(111) retain a considerably higher stress, around 900 MPa, with only minor decrease versus
film thickness. Stacking faults are indeed geometrically a less efficient relief mechanism for …
determined by their growth orientation. Stress evaluation locally with Raman spectroscopy,
and across a 150 mm wafer with curvature measurements, indicate that thin films can be
grown on Si (100) with residual tensile stresses as low as 150 MPa. However, films on Si
(111) retain a considerably higher stress, around 900 MPa, with only minor decrease versus
film thickness. Stacking faults are indeed geometrically a less efficient relief mechanism for …
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