zone Si samples were implanted at 250° C with 350 keV Fe ions to fluences in the range 1–
5× 10 15/cm 2 and annealed in vacuum at 800° C for times up to 24 h. Detailed
morphological analyses of these samples, using transmission electron microscopy, reveal
the presence of (i) a band of small (with a diameter< 30 nm) highly strained β-FeSi 2
precipitates centered at a depth of∼ 150 nm,(ii) a band of large (> 100 nm diameter) fully …