Oxygen Precipitation Behavior in 300 mm Polished Czorchralski Silicon Wafers

T Ono, GA Rozgonyi, C Au, T Messina… - Journal of The …, 1999 - iopscience.iop.org
T Ono, GA Rozgonyi, C Au, T Messina, RK Goodall, HR Huff
Journal of The Electrochemical Society, 1999iopscience.iop.org
Results Oxygen precipitation behavior.—The four graphs in Fig. 1 show the dependence of
the oxygen precipitation fraction after high temperature annealing at 1050C for 4, 16, 64,
and 99 h following various 750C preanneal times. The oxygen converted fraction,, is defined
as
Results
Oxygen precipitation behavior.—The four graphs in Fig. 1 show the dependence of the oxygen precipitation fraction after high temperature annealing at 1050C for 4, 16, 64, and 99 h following various 750C preanneal times. The oxygen converted fraction,, is defined as
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