Performance of a new generation of micropixel avalanche photodiodes with high pixel density and high photon detection efficiency
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2018•Elsevier
Performance of a new generation of micropixel avalanche photodiodes of MAPD-3NK type
from Zecotek Photonics as a function of the bias voltage has been studied at the temperature
range from–116° C to 20° C. The temperature coefficient of the breakdown voltage for this
device is 58±3mV/∘ C. Photon detection efficiency of the MAPD-3NK has been compared
with that of a similar device (serial number: S12572-010P) from Hamamatsu Photonics at the
temperature of–27° C. Both photodiodes have the same pixel density of 10,000 pixel/mm 2 …
from Zecotek Photonics as a function of the bias voltage has been studied at the temperature
range from–116° C to 20° C. The temperature coefficient of the breakdown voltage for this
device is 58±3mV/∘ C. Photon detection efficiency of the MAPD-3NK has been compared
with that of a similar device (serial number: S12572-010P) from Hamamatsu Photonics at the
temperature of–27° C. Both photodiodes have the same pixel density of 10,000 pixel/mm 2 …
Performance of a new generation of micropixel avalanche photodiodes of MAPD-3NK type from Zecotek Photonics as a function of the bias voltage has been studied at the temperature range from–116° C to 20° C. The temperature coefficient of the breakdown voltage for this device is 58±3mV/∘ C. Photon detection efficiency of the MAPD-3NK has been compared with that of a similar device (serial number: S12572-010P) from Hamamatsu Photonics at the temperature of–27° C. Both photodiodes have the same pixel density of 10,000 pixel/mm 2. The photon detection efficiency of 5±0.3% and 40±2% was measured at the same overvoltage of 3 V for the S12572-010P and the MAPD-3NK, respectively.
Elsevier
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