Photoelectrochemical cells based on chemically deposited nanocrystalline Bi2S3 thin films
Materials chemistry and physics, 1999•Elsevier
Nanocrystalline bismuth sulphide (Bi2S3) thin films of various thicknesses having grain size
between 7 and 34nm have been prepared by using chemical bath deposition method onto
fluorine doped tin oxide (FTO) coated glass substrates (sheet resistance 20–30Ωcm2) from
an aqueous acidic bath (pH= 5). Bismuth nitrate and thioacetamide were used as Bi3+ and
S2− ion sources, respectively. Films were prepared at the bath temperature of 6° C. The
Bi2S3/polysulphide junction cells were fabricated and their photoelectrochemical …
between 7 and 34nm have been prepared by using chemical bath deposition method onto
fluorine doped tin oxide (FTO) coated glass substrates (sheet resistance 20–30Ωcm2) from
an aqueous acidic bath (pH= 5). Bismuth nitrate and thioacetamide were used as Bi3+ and
S2− ion sources, respectively. Films were prepared at the bath temperature of 6° C. The
Bi2S3/polysulphide junction cells were fabricated and their photoelectrochemical …
Nanocrystalline bismuth sulphide (Bi2S3) thin films of various thicknesses having grain size between 7 and 34nm have been prepared by using chemical bath deposition method onto fluorine doped tin oxide (FTO) coated glass substrates (sheet resistance 20–30Ωcm2) from an aqueous acidic bath (pH=5). Bismuth nitrate and thioacetamide were used as Bi3+ and S2− ion sources, respectively. Films were prepared at the bath temperature of 6°C. The Bi2S3/polysulphide junction cells were fabricated and their photoelectrochemical performance was studied. The grain size and thickness of Bi2S3 films were found to cause significant changes in the photoelectrochemical cell performance.
Elsevier
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