Multilayer GaSb/GaAs self-assembled quantum dots grown by metalorganic chemical vapor deposition
KSA Butcher, EM Goldys, TL Tansley - Materials chemistry and physics, 2003 - Elsevier
A mutilayer structure of self-assembled GaSb/GaAs quantum dots (QDs) has been grown for
the first time by metalorganic chemical vapor deposition (MOCVD) in the Stranski–
Krastanow (S–K) growth mode. Evidence of the growth of the self-assembled quantum dots
was provided using transmission electron microscopy. This study shows that the GaSb/GaAs
heterostructure is well controlled and there is no sign of the intermixing that often occurs for
this system. The existence of the quantum dots and of a wetting layer was also supported by …
the first time by metalorganic chemical vapor deposition (MOCVD) in the Stranski–
Krastanow (S–K) growth mode. Evidence of the growth of the self-assembled quantum dots
was provided using transmission electron microscopy. This study shows that the GaSb/GaAs
heterostructure is well controlled and there is no sign of the intermixing that often occurs for
this system. The existence of the quantum dots and of a wetting layer was also supported by …
Photoluminescence of multilayer self-assembled quantum dots grown by metalorganic chemical vapor deposition at atmospheric pressure
We investigate photoluminescence from multilayer GaSb self-assembled quantum dots
embedded in GaAs grown by metalorganic chemical vapor deposition. The spectra show the
emission from quantum dots at about 1.09 eV and from the wetting layer at 1.39 eV. With
increasing temperature the wetting layer emission quenches faster than the quantum dot
emission. We also observe a decrease of the quantum dot peak energy at temperatures
between 50 and 70 K and a peak shift with increasing excitation powers typical of type II …
embedded in GaAs grown by metalorganic chemical vapor deposition. The spectra show the
emission from quantum dots at about 1.09 eV and from the wetting layer at 1.39 eV. With
increasing temperature the wetting layer emission quenches faster than the quantum dot
emission. We also observe a decrease of the quantum dot peak energy at temperatures
between 50 and 70 K and a peak shift with increasing excitation powers typical of type II …