Piezoelectric oxide semiconductor field effect transistor touch sensing devices
This work presents piezoelectric oxide semiconductor field effect transistor (POSFET) based
touch sensing devices. These devices are fabricated by spin coating thin (∼ 2.5 μ m)
piezoelectric polymer film directly on to the gate area of metal oxide semiconductor (MOS)
transistor. The polymer film is processed in situ and challenging issues such as in situ poling
of piezoelectric polymer film, without damaging or altering the characteristics of underlying
MOS devices, are successfully dealt with. The POSFET device represents an integral …
touch sensing devices. These devices are fabricated by spin coating thin (∼ 2.5 μ m)
piezoelectric polymer film directly on to the gate area of metal oxide semiconductor (MOS)
transistor. The polymer film is processed in situ and challenging issues such as in situ poling
of piezoelectric polymer film, without damaging or altering the characteristics of underlying
MOS devices, are successfully dealt with. The POSFET device represents an integral …
以上显示的是最相近的搜索结果。 查看全部搜索结果